Initial Growth Of Thin Hydrogenated Amorphous Silicon Layer On Low Conductivity Substrates Monitored By In-situ Transient Microwave Photoconductivity Measurements

摘要

The monitoring of the microwave reflection changes after pulsed laser illumination enables the in-situ characterization of important optical and electrical material parameters during the growth of intrinsic hydrogenated amorphous silicon on low conductivity substrates.